Apparatus, system, and method for tunneling MOSFETs using self-aligned heterostructure source and isolated drain

US8421165B2 · kind B2 · utility

Assignee

• Sematech, Inc. · US

Inventors

• Wei-Yip Loh · Hsinchu, TW
• Kanghoon Jeon · Albany, US
• Chanro Park · Clifton Park, US

Key dates

• Filing date: May 11, 2010
• Grant date: Apr 16, 2013
• Expiry date: Apr 2, 2031

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/371

Abstract

Apparatuses, systems, and methods for tunneling MOSFETs (TFETs) using a self-aligned heterostructure source and isolated drain. TFETs that have an abrupt junction between source and drain regions have an increased probability of carrier direct tunneling (e.g., electrons and holes). The increased probability allows a higher achievable on current in TFETs having the abrupt junction.