Method and system for providing dual magnetic tunneling junctions usable in spin transfer torque magnetic memories
US8422285B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 23, 2011 |
| Grant date | Apr 16, 2013 |
| Priority date | — |
| Expiry date | Aug 12, 2031 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/1675
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A method and system for providing a magnetic junction usable in a magnetic memory are described. The magnetic junction includes first and second pinned layers, first and second nonmagnetic spacer layers, and a free layer. The pinned layers are nonmagnetic layer-free and self-pinned. In some aspects, the magnetic junction is configured to allow the free and second pinned layers to be switched between stable magnetic states when write currents are passed therethrough. The magnetic junction has greater than two stable states. In other aspects, the magnetic junction includes at least third and fourth spacer layers, a second free layer therebetween, and a third pinned layer having a pinned layer magnetic moment, being nonmagnetic layer-free, and being coupled to the second pinned layer. The magnetic junction is configured to allow the free layers to be switched between stable magnetic states when write currents are passed therethrough.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.