Low-crystallization temperature MTJ for spin-transfer torque magnetic random access memory (STTMRAM)
US8422286B2 · kind B2 · utility
81Cited by
0References
19Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 2, 2012 |
| Grant date | Apr 16, 2013 |
| Priority date | — |
| Expiry date | Apr 2, 2032 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S977/933
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A spin-torque transfer memory random access memory (STTMRAM) element is disclosed and has a fixed layer, a barrier layer formed upon the fixed layer, and a free layer comprised of a low-crystallization temperature alloy of CoFeB—Z where Z is below 25 atomic percent of one or more of titanium, (Ti), yittrium (Y), zirconium (Zr), and vanadium (V), wherein during a write operation, a bidirectional electric current is applied across the STTMRAM element to switch the magnetization of the free layer between parallel and anti-parallel states relative to the magnetization of the fixed layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.