Optical device structure using miscut GaN substrates for laser applications
US8422525B1 · kind B1 · utility
209Cited by
34References
18Claims
0Family size
Assignee
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Key dates
| Filing date | Mar 29, 2010 |
| Grant date | Apr 16, 2013 |
| Priority date | — |
| Expiry date | Mar 29, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S2301/14
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
An optical device capable of emitting light having a wavelength ranging from about 490 to about 580 nanometers has a gallium nitride substrate with a semipolar crystalline surface region characterized by an orientation of greater than 3 degrees from (11-22) towards (0001) but less than about 50 degrees. A laser stripe formed on the substrate has a cavity orientation substantially parallel to the m-direction.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.