Manufacturing method for semiconductor structure
US8426284B2 · kind B2 · utility
6Cited by
78References
19Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 11, 2011 |
| Grant date | Apr 23, 2013 |
| Priority date | — |
| Expiry date | Sep 8, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/021
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A manufacturing method for a semiconductor structure includes providing a substrate having at least a gate structure formed thereon, performing a first wet etching process to etch the substrate at two sides of the gate structure, performing a second wet etching process to etch the substrate to form a recess respectively at two sides of the gate structure, and performing a selective epitaxial growth method to form an epitaxial layer having a diamond shape with a flat bottom respectively in the recess.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.