Method of forming a shared contact in a semiconductor device
US8426310B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 25, 2010 |
| Grant date | Apr 23, 2013 |
| Priority date | — |
| Expiry date | Mar 28, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76808
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for forming a shared contact in a semiconductor device having a gate electrode corresponding to a first transistor and a source/drain region corresponding to a second transistor is provided. The method includes forming a first opening in a dielectric layer overlying the gate electrode and the source/drain region, wherein the first opening extends substantially to the gate electrode corresponding to the first transistor. The method further includes after forming the first opening, forming a second opening, contiguous with the first opening, in the overlying dielectric layer, wherein the second opening extends substantially to the source/drain region corresponding to the second transistor. The method further includes forming the shared contact between the gate electrode corresponding to the first transistor and the source/drain region corresponding to the second transistor by filling the first opening and the second opening with a conductive material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.