Patent · US Active

Integrated circuitry

US8426919B2 · kind B2 · utility

5Cited by

72References

10Claims

0Family size

Assignee

Micron Technology, Inc. · US

Inventors

David H. Wells · Boise, US
Eric Blomiley · Boise, US

Key dates

Filing date	Apr 28, 2011
Grant date	Apr 23, 2013
Priority date	—
Expiry date	Sep 11, 2031

Classification

Technology area (CPC H)Electricity
CPC primaryH01L2924/0002
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

Some embodiments include formation of at least one cavity in a first semiconductor material, followed by epitaxially growing a second semiconductor material over the first semiconductor material and bridging across the at least one cavity. The cavity may be left open, or material may be provided within the cavity. The material provided within the cavity may be suitable for forming, for example, one or more of electromagnetic radiation interaction components, transistor gates, insulative structures, and coolant structures. Some embodiments include one or more of transistor devices, electromagnetic radiation interaction components, transistor devices, coolant structures, insulative structures and gas reservoirs.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.