Penetrating implant for forming a semiconductor device

US8426927B2 · kind B2 · utility

Assignee

• Intel Corporation · US

Inventors

• Giuseppe Curello · Portland, US
• Ian R. Post · Colorado Springs, US
• Nick Lindert · Beaverton, US
• Walid M. Hafez · Portland, US
• Chia-Hong Jan · Portland, US
• Mark Bohr · Beaverton, US

Key dates

• Filing date: May 13, 2011
• Grant date: Apr 23, 2013
• Expiry date: Oct 26, 2031

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y10S438/918

Abstract

A semiconductor device and method to form a semiconductor device is described. The semiconductor includes a gate stack disposed on a substrate. Tip regions are disposed in the substrate on either side of the gate stack. Halo regions are disposed in the substrate adjacent the tip regions. A threshold voltage implant region is disposed in the substrate directly below the gate stack. The concentration of dopant impurity atoms of a particular conductivity type is approximately the same in both the threshold voltage implant region as in the halo regions. The method includes a dopant impurity implant technique having sufficient strength to penetrate a gate stack.