Low current switching magnetic tunnel junction design for magnetic memory using domain wall motion
US8427863B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 7, 2011 |
| Grant date | Apr 23, 2013 |
| Priority date | — |
| Expiry date | Jul 2, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N50/80
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A multi-state low-current-switching magnetic memory element (magnetic memory element) comprising a free layer, two stacks, and a magnetic tunneling junction is disclosed. The stacks and magnetic tunneling junction are disposed upon surfaces of the free layer, with the magnetic tunneling junction located between the stacks. The stacks pin magnetic domains within the free layer, creating a free layer domain wall. A current passed from stack to stack pushes the domain wall, repositioning the domain wall within the free layer. The position of the domain wall relative to the magnetic tunnel junction corresponds to a unique resistance value, and passing current from a stack to the magnetic tunnel junction reads the magnetic memory element's resistance. Thus, unique memory states may be achieved by moving the domain wall.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.