Sputtering target and method for production thereof
US8430978B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 14, 2004 |
| Grant date | Apr 30, 2013 |
| Priority date | — |
| Expiry date | Jul 14, 2024 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC22F1/053
- WIPO fieldMaterials, metallurgy
- WIPO sectorChemistry
Abstract
A sintered sputtering target having a structure where the average crystallize size is 1 nm to 50 nm and preferably comprises an alloy having a three-component system or greater containing, as its primary component, at least one element selected from among Zr, Pd, Cu, Co, Fe, Ti, Mg, Sr, Y, Nb, Mo, Tc, Ru, Rh, Ag, Cd, In, Sn, Sb, Te and a rare earth metal. This target is manufactured by sintering atomized powder. Thereby provided is a high density target having an extremely fine and uniform structure manufactured with the sintering method, in place of a conventional bulk metal glass produced by the quenching of a molten metal, which has a coarse crystal structure and requires a high cost for its production.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.