Methods of forming a nonvolatile memory cell and methods of forming an array of nonvolatile memory cells

US8431458B2 · kind B2 · utility

Assignee

• Micron Technology, Inc. · US

Inventors

• Scott E. Sills · Boise, US
• Gurtej S. Sandhu · Boise, US

Key dates

• Filing date: Dec 27, 2010
• Grant date: Apr 30, 2013
• Expiry date: Dec 27, 2030

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10N70/884

Abstract

A method of forming a nonvolatile memory cell includes forming a first electrode and a second electrode of the memory cell. Sacrificial material is provided between the first second electrodes. The sacrificial material is exchanged with programmable material. The sacrificial material may additionally be exchanged with select device material.