Capacitor contact formed concurrently with bond pad metallization

US8431463B2 · kind B2 · utility

Assignee

• TEXAS INSTRUMENTS INCORPORATED · US

Inventors

• Maxwell Lippitt · Satellite Beach, US
• Stephen Arlon Meisner · St. Cloud, US
• Lee Alan Stringer · Frisco, US
• Stephen F. Clark · North Andover, US
• Fred Percy Debnam, II · Garland, US
• Byron Lovell Williams · Plano, US

Key dates

• Filing date: Aug 10, 2009
• Grant date: Apr 30, 2013
• Expiry date: Apr 27, 2030

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L2924/19041
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A method is disclosed for passivating and contacting a capacitor in an IC above a top level of interconnect metallization, without adding process steps. Passivation is accomplished by a dielectric layer, part of the IC protective overcoat, deposited directly on the capacitor, overlapping the electrode edges. Contact is made to the top electrode of the capacitor by etching small capacitor vias during a bond pad via etch process, followed by depositing and patterning bond pad metal in the capacitor vias to connect the top electrode to other circuit elements in the IC. The top electrode thickness is increased to accommodate the bond pad via etch process.