Interconnect structure for improved time dependent dielectric breakdown

US8431486B2 · kind B2 · utility

Assignee

• International Business Machines Corporation · US

Inventors

• Cyril Cabral, Jr. · Ossining, US
• Sebastian U. Engelmann · White Plains, US
• Benjamin L. Fletcher · Denver, US
• Eric A. Joseph · White Plains, US
• Satyanarayana V. Nitta · Poughquag, US

Key dates

• Filing date: Aug 10, 2010
• Grant date: Apr 30, 2013
• Expiry date: Apr 20, 2031

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L2924/0002
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

The present disclosure provides a method of forming an interconnect to an electrical device. In one embodiment, the method of forming an interconnect includes providing a device layer on a substrate, wherein the device layer comprises at least one electrical device, an intralevel dielectric over the at least one electrical device, and a contact that is in electrical communication with the at least one electrical device. An interconnect metal layer is formed on the device layer, and a tantalum-containing etch mask is formed on a portion of the interconnect metal layer. The interconnect metal layer is etched to provide a trapezoid shaped interconnect in communication with the at least one electrical device. The trapezoid shaped interconnect has a first surface that is in contact with the device layer with a greater width than a second surface of the trapezoid shaped interconnect that is in contact with the tantalum-containing etch mask.