Semiconductor structure and semiconductor device including a diode structure and methods of forming same

US8431923B2 · kind B2 · utility

Assignee

• Micron Technology, Inc. · US

Inventor

• Jaydeb Goswami · Boise, US

Key dates

• Filing date: Feb 7, 2011
• Grant date: Apr 30, 2013
• Expiry date: Aug 19, 2031

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10N70/00

Abstract

Methods of forming diode structures for use in memory cells and memory arrays, such as resistive random access memory (RRAM). The methods include forming a first electrode by chemisorbing a graphite material (e.g., graphene) on a conductive material. A low-k dielectric material may be formed over surfaces of the first electrode exposed through an opening in a dielectric material overlying the first electrode, followed by formation of a high-k dielectric material over the low-k dielectric material. A remaining portion of the opening may be filled with another conductive material to form a second electrode. The first and second electrodes of the resulting diode structure have different work functions and, thus, provide a low thermal budget, a low contact resistance, a high forward-bias current and a low reverse-bias current. A memory cell and a memory array including such a diode structure are also disclosed.