Method of forming an ESD protection device and structure therefor
US8431959B2 · kind B2 · utility
4Cited by
2References
21Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 19, 2010 |
| Grant date | Apr 30, 2013 |
| Priority date | — |
| Expiry date | Jun 17, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D8/411
Abstract
In one embodiment, a bi-directional ESD device is formed to have a third harmonic at frequencies no less than about one gigahertz wherein the third harmonic has a magnitude that is no greater than about minus thirty five dBm.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.