Dopant diffusion modulation in GaN buffer layers
US8431960B2 · kind B2 · utility
25Cited by
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11Claims
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Key dates
| Filing date | Apr 7, 2010 |
| Grant date | Apr 30, 2013 |
| Priority date | — |
| Expiry date | Apr 4, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/62
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An enhancement mode gallium nitride (GaN) transistor with a Mg doped layer and a Mg growth interruption (diffusion barrier) layer to trap excess or residual Mg dopant. The Mg growth interruption (diffusion barrier) layer is formed by growing GaN, stopping the supply of gallium while maintaining a supply of ammonia or other nitrogen containing source to form a layer of magnesium nitride (MgN), and then resuming the flow of gallium to form a GaN layer to seal in the layer of MgN.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.