Metal-passivating CMP compositions and methods
US8435421B2 · kind B2 · utility
34Cited by
1References
11Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 11, 2011 |
| Grant date | May 7, 2013 |
| Priority date | — |
| Expiry date | Jun 19, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/3212
- WIPO fieldBasic materials chemistry
- WIPO sectorChemistry
Abstract
The present invention provides chemical-mechanical polishing (CMP) compositions and methods for polishing copper- and/or silver-containing substrates. The compositions of the present invention comprise a particulate abrasive, a primary film-forming metal-complexing agent, and a secondary film-forming metal-passivating agent in an aqueous carrier. Methods of polishing a substrate with the compositions of the invention are also disclosed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.