Method for making group III nitride articles
US8435879B2 · kind B2 · utility
9Cited by
46References
12Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 30, 2006 |
| Grant date | May 7, 2013 |
| Priority date | — |
| Expiry date | May 23, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/825
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Group III (Al, Ga, In)N single crystals, articles and films useful for producing optoelectronic devices (such as light emitting diodes (LEDs), laser diodes (LDs) and photodetectors) and electronic devices (such as high electron mobility transistors (HEMTs)) composed of III-V nitride compounds, and methods for fabricating such crystals, articles and films.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.