Memory and write control method
US8437180B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 8, 2010 |
| Grant date | May 7, 2013 |
| Priority date | — |
| Expiry date | Apr 29, 2031 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/161
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A memory includes: a memory device that has a memory layer storing data as a magnetization state of a magnetic body and a magnetization fixed layer whose direction of magnetization is fixed through a nonmagnetic layer interposed between the memory layer and the magnetization fixed layer and stores the data in the memory layer by changing a magnetization direction of the memory layer when a write current flowing in a stacked direction of the memory layer and the magnetization fixed layer is applied; and a voltage control unit that supplies the write current configured by independent pulse trains of two or more to the memory device by using a write voltage that is configured by independent pulse trains of two or more.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.