FinFET and method of fabricating the same
US8440517B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 13, 2010 |
| Grant date | May 14, 2013 |
| Priority date | — |
| Expiry date | Sep 3, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/822
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The disclosure relates to a fin field effect transistor (FinFET). An exemplary structure for a FinFET comprises a substrate comprising a top surface; a first insulation region and a second insulation region over the substrate top surface comprising tapered top surfaces; a fin of the substrate extending above the substrate top surface between the first and second insulation regions, wherein the fin comprises a recessed portion having a top surface lower than the tapered top surfaces of the first and second insulation regions, wherein the fin comprises a non-recessed portion having a top surface higher than the tapered top surfaces; and a gate stack over the non-recessed portion of the fin.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.