Patent · US Active

Methods for deposition of silicon carbide and silicon carbonitride films

US8440571B2 · kind B2 · utility

11Cited by
3References
15Claims
0Family size

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Inventors

Key dates

Filing dateNov 3, 2011
Grant dateMay 14, 2013
Priority date—
Expiry dateNov 3, 2031

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L21/0262
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

Methods for deposition of silicon carbide films on a substrate surface are provided. The methods include the use of vapor phase carbosilane precursors and may employ plasma enhanced atomic layer deposition processes. The methods may be carried out at temperatures less than 600° C., for example between about 23° C. and about 200° C. or at about 100° C. This silicon carbide layer may then be densified to remove hydrogen content. Additionally, the silicon carbide layer may be exposed to a nitrogen source to provide reactive N—H groups, which can then be used to continue film deposition using other methods. Plasma processing conditions can be used to adjust the carbon, hydrogen and/or nitrogen content of the films.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.