Heterojunction tunneling field effect transistors, and methods for fabricating the same

US8441000B2 · kind B2 · utility

Assignee

• International Business Machines Corporation · US

Inventors

• Xiangdong Chen · Irvine, US
• Haining Yang · Wappingers Falls, US

Key dates

• Filing date: Feb 1, 2006
• Grant date: May 14, 2013
• Expiry date: Mar 3, 2026

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/822

Abstract

The present invention relates to a heterojunction tunneling effect transistor (TFET), which comprises spaced apart source and drain regions with a channel region located therebetween and a gate stack located over the channel region. The drain region comprises a first semiconductor material and is doped with a first dopant species of a first conductivity type. The source region comprises a second, different semiconductor material and is doped with a second dopant species of a second, different conductivity type. The gate stack comprises at least a gate dielectric and a gate conductor. When the heterojunction TFET is an n-channel TFET, the drain region comprises n-doped silicon, while the source region comprises p-doped silicon germanium. When the heterojunction TFET is a p-channel TPET, the drain region comprises p-doped silicon, while the source region comprises n-doped SiC.