Embedded memory device having MIM capacitor formed in excavated structure
US8441057B2 · kind B2 · utility
1Cited by
3References
7Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 16, 2011 |
| Grant date | May 14, 2013 |
| Priority date | — |
| Expiry date | May 29, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/043
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A method of patterning a metal (141, 341, 841) on a vertical sidewall (132, 332, 832) of an excavated feature (130, 330, 830) includes placing a material (350) in the excavated feature such that a portion (435) of the metal is exposed in the excavated feature above the material, etching the exposed portion of the metal away from the vertical sidewall using a first wet etch chemistry, and removing the material from the excavated feature by etching it away using a second wet etch chemistry. The described method may be used to produce a MIM capacitor (800) suitable for an eDRAM device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.