Patent · US Active

Interface control for improved switching in RRAM

US8441835B2 · kind B2 · utility

46Cited by

90References

19Claims

0Family size

Assignee

CrossBar, Inc. · US

Inventors

Sung Hyun Jo · Sunnyvale, US
Hagop Nazarian · San Jose, US
Wei Lu · Ann Arbor, US

Key dates

Filing date	Jun 11, 2010
Grant date	May 14, 2013
Priority date	—
Expiry date	Jun 11, 2030

Classification

Technology area (CPC G)Physics
CPC primaryG11C2213/33
WIPO fieldComputer technology
WIPO sectorElectrical engineering

Abstract

A memory device has a crossbar array including a first array of first electrodes extending along a first direction. A second array of second electrodes extends along a second direction. A non-crystalline silicon structure provided between the first electrode and the second electrode at an intersection defined by the first array and the second array. The non-crystalline silicon structure has a first layer having a first defect density and a second layer having a second defect density different from the first defect density. Each intersection of the first array and the second array defines a two-terminal memory cell.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.