3D vertical NAND and method of making thereof by front and back side processing
US8445347B2 · kind B2 · utility
81Cited by
15References
14Claims
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Key dates
| Filing date | Apr 11, 2011 |
| Grant date | May 21, 2013 |
| Priority date | — |
| Expiry date | Sep 25, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/693
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Monolithic three dimensional NAND strings and methods of making. The method includes both front side and back side processing. Using the combination of front side and back side processing, a NAND string can be formed that includes an air gap between the floating gates in the NAND string. The NAND string may be formed with a single vertical channel. Alternatively, the NAND string may have a U shape with two vertical channels connected with a horizontal channel.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.