Patent · US Active

Metal-insulator-metal capacitors with high capacitance density

US8445355B2 · kind B2 · utility

15Cited by

7References

22Claims

0Family size

Assignee

International Business Machines Corporation · US

Inventors

Michel J. Abou-Khalil · South Burlington, US
Robert J. Gauthier, Jr. · South Burlington, US
Tom C. Lee · South Burlington, US
Junjun Li · Williston, US
Souvick Mitra · South Burlington, US
Christopher S. Putnam · South Burlington, US
Anthony K. Stamper · Williston, US

Key dates

Filing date	Dec 15, 2010
Grant date	May 21, 2013
Priority date	—
Expiry date	Apr 20, 2031

Classification

Technology area (CPC H)Electricity
CPC primaryH10D89/10
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

Metal-insulator-metal (MIM) capacitors and methods for fabricating MIM capacitors. The MIM capacitor includes an interlayer dielectric (ILD) layer with apertures each bounded by a plurality of sidewalls and each extending from the top surface of the ILD layer into the first interlayer dielectric layer. A layer stack, which is disposed on the sidewalls of the apertures and the top surface of the ILD layer, includes a bottom conductive electrode, a top conductive electrode, and a capacitor dielectric between the bottom and top conductive electrodes.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.