Variable resistance memory programming
US8446758B2 · kind B2 · utility
9Cited by
9References
33Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Dec 14, 2010 |
| Grant date | May 21, 2013 |
| Priority date | — |
| Expiry date | Apr 14, 2031 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2013/0092
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Some embodiments include a device having memory elements and methods of storing information into the memory elements. Such methods can include increasing a temperature of a portion of a memory element for a time interval during an operation to change a resistance state of the memory element. After the time interval, the methods can include decreasing the temperature of the portion of the memory element. Decreasing the temperature can be performed using a signal having a first negative slope and a second negative slope. Other embodiments are described.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.