Programmable memory repair scheme
US8446788B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 9, 2009 |
| Grant date | May 21, 2013 |
| Priority date | — |
| Expiry date | Feb 16, 2030 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2229/743
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
The present disclosure provides semiconductor devices and methods, systems, and apparatus for testing and operating the same. A semiconductor memory device includes data storage elements and a repair circuit. The data storage elements include primary data storage elements and one or more redundant data storage elements, the primary data storage elements having respective addresses for memory access operations. The repair circuit is programmable by another semiconductor device separate from the memory device to recognize a malfunctioning address of the primary data storage elements and the programmed repair circuit is configured to reroute memory access from a primary data storage element having the recognized malfunctioning address to a corresponding redundant data storage element.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.