Semiconductor wafer with an epitaxially deposited layer, and process for producing the semiconductor wafer

US8449675B2 · kind B2 · utility

Assignee

• Siltronic AG · DE

Inventors

• Rupert Krautbauer · Wilster, DE
• Gerhard Huettl · Waldkraiburg, DE
• Andrej Lenz · Tittmoning, DE
• Erwin Mayer · Burghausen, DE
• Rainer Winkler · Lambach, DE

Key dates

• Filing date: Jul 28, 2008
• Grant date: May 28, 2013
• Expiry date: Mar 27, 2032

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/157

Abstract

A semiconductor wafer is formed of a substrate wafer of single crystal silicon doped with dopant atoms of the n type or p type, with a front surface and a back surface, contains a layer deposited epitaxially on the front surface of the substrate wafer. The substrate wafer additionally includes an n++ or p++ doped layer, which extends from the front surface of the substrate wafer into the substrate wafer and has a defined thickness. The semiconductor wafer is produced by a process in which dopant atoms of the n type or p type are introduced into the substrate wafer through the front surface of the substrate wafer, the dopant concentration in a layer which extends from the front surface of the substrate wafer into the substrate wafer being increased from the level n+ or p+ to the level n++ or p++, and an epitaxial layer is then deposited on this layer.