Method for producing a thyristor

US8450156B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Harald Gossner · Riemerling, DE
• Thomas Schulz · Austin, US
• Christian Russ · Diedorf, DE
• Gerhard Knoblinger · Villach, AT

Key dates

• Filing date: May 29, 2012
• Grant date: May 28, 2013
• Expiry date: May 29, 2032

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L2924/0002
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

In a method for producing a thyristor, first and second connection regions are formed on or above a substrate; the first connection region is doped with dopant atoms of a first conductivity type and the second connection region is doped with dopant atoms of a second conductivity type; first and second body regions are formed between the connection regions, wherein the first body region is formed between the first connection region and second body region, and the second body region is formed between the first body region and second connection region; the first body region is doped with dopant atoms of the second conductivity type and the second body region is doped with dopant atoms of the first conductivity type, wherein the dopant atoms are in each case introduced into the respective body region using a Vt implantation method; a gate region is formed on or above the body regions.