Ferro-electric capacitor modules, methods of manufacture and design structures
US8450168B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 25, 2010 |
| Grant date | May 28, 2013 |
| Priority date | — |
| Expiry date | Jan 29, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B53/30
Abstract
Ferro-electric capacitor modules, methods of manufacture and design structures. The method of manufacturing the ferro-electric capacitor includes forming a barrier layer on an insulator layer of a CMOS structure. The method further includes forming a top plate and a bottom plate over the barrier layer. The method further includes forming a ferro-electric material between the top plate and the bottom plate. The method further includes encapsulating the barrier layer, top plate, bottom plate and ferro-electric material with an encapsulating material. The method further includes forming contacts to the top plate and bottom plate, through the encapsulating material. At least the contact to the top plate and a contact to a diffusion of the CMOS structure are in electrical connection through a common wire.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.