Techniques for temperature-controlled ion implantation
US8450193B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 28, 2007 |
| Grant date | May 28, 2013 |
| Priority date | — |
| Expiry date | Jun 23, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/336
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Techniques for temperature-controlled ion implantation are disclosed. In one particular exemplary embodiment, the techniques may be realized as an apparatus for temperature-controlled ion implantation. The apparatus may comprise a platen to hold a wafer in a single-wafer process chamber during ion implantation, the platen including: a wafer clamping mechanism to secure the wafer onto the platen and to provide a predetermined thermal contact between the wafer and the platen, and one or more heating elements to pre-heat and maintain the platen in a predetermined temperature range above room temperature. The apparatus may also comprise a post-cooling station to cool down the wafer after ion implantation. The apparatus may further comprise a wafer handling assembly to load the wafer onto the pre-heated platen and to remove the wafer from the platen to the post-cooling station.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.