Patent · US Active

Production of an integrated circuit including electrical contact on SiC

US8450196B2 · kind B2 · utility

5Cited by

7References

5Claims

0Family size

Assignee

Infineon Technologies Austria AG · AT

Inventors

Roland Rupp · Achern, DE
Thomas Gutt · Taufkirchen, DE
Michael Treu · Villach, AT

Key dates

Filing date	Oct 25, 2007
Grant date	May 28, 2013
Priority date	—
Expiry date	Dec 4, 2028

Classification

Technology area (CPC H)Electricity
CPC primaryH10D64/64
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

Production of an integrated circuit including an electrical contact on SiC is disclosed. One embodiment provides for production of an electrical contact on an SiC substrate, in which a conductive contact is produced on a boundary surface of the SiC substrate by irradiation and absorption of a laser pulse on an SiC substrate.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.