Memory array with an air gap between memory cells and the formation thereof
US8450789B2 · kind B2 · utility
7Cited by
9References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 24, 2010 |
| Grant date | May 28, 2013 |
| Priority date | — |
| Expiry date | Oct 11, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/0413
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Memory arrays and their formation are disclosed. One such memory array has first and second memory cells over a semiconductor, an air gap between the first and second memory cells, and an isolation region within the semiconductor and under the air gap so that the isolation region is aligned with the air gap.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.