Gate replacement with top oxide regrowth for the top oxide improvement
US8455268B2 · kind B2 · utility
1Cited by
4References
20Claims
0Family size
Assignee
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Key dates
| Filing date | Aug 31, 2007 |
| Grant date | Jun 4, 2013 |
| Priority date | — |
| Expiry date | Jan 19, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/037
Abstract
Methods of replacing/reforming a top oxide around a charge storage element of a memory cell and methods of improving quality of a top oxide around a charge storage element of a memory cell are provided. The method can involve removing a first poly over a first top oxide from the memory cell; removing the first top oxide from the memory cell; and forming a second top oxide around the charge storage element. The second top oxide can be formed by oxidizing a portion of the charge storage element or by forming a sacrificial layer over the charge storage element and oxidizing the sacrificial layer to a second top oxide.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.