Deposition of germanium film
US8455292B2 · kind B2 · utility
15Cited by
10References
9Claims
0Family size
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Key dates
| Filing date | Sep 9, 2011 |
| Grant date | Jun 4, 2013 |
| Priority date | — |
| Expiry date | Sep 9, 2031 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/50
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for forming a photodetector device includes forming waveguide feature on a substrate, and forming a photodetector feature including a germanium (Ge) film, the Ge film deposited on the waveguide feature using a plasma enhanced chemical vapor deposition (PECVD) process, the PECVD process having a deposition temperature from about 500° C. to about 550° C., and a deposition pressure from about 666.612 Pa to about 1066.579 Pa.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.