Photonic-crystal light emitting diode and method of manufacture
US8455894B1 · kind B1 · utility
40Cited by
87References
34Claims
0Family size
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Key dates
| Filing date | Sep 29, 2009 |
| Grant date | Jun 4, 2013 |
| Priority date | — |
| Expiry date | Sep 11, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/872
Abstract
A high efficiency photonic-crystal light emitting diode comprises a flip-chipped stack of AlxInyGa1-x-yN layers, where 0≦x, y, x+y≦1. Each layer has a high crystalline quality, with a dislocation density below about 105 cm−2. The backside of the stack, exposed by removal of the original substrate, has a photonic crystal pattern for improved light extraction.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.