Nonvolatile memory device and method for fabricating the same
US8456909B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 1, 2011 |
| Grant date | Jun 4, 2013 |
| Priority date | — |
| Expiry date | Dec 1, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/693
Abstract
Provided are a nonvolatile memory device and a method for fabricating the same, which can secure the structural stability of a three-dimensional nonvolatile memory device. The nonvolatile memory device includes one or more columnar channel plugs, a plurality of word lines and a plurality of dielectric layers stacked alternately to surround the columnar channel plug, a memory layer disposed between the word line and the columnar channel plug, a plurality of word line connection portions, each of the word line connection portions connecting ends of word lines of a common layer from among the plurality of word lines, and a plurality of word line extension portions extending from the word line connection portions.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.