Method and system for etching a MEM device
US8460567B2 · kind B2 · utility
38Cited by
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16Claims
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Key dates
| Filing date | Jul 1, 2008 |
| Grant date | Jun 11, 2013 |
| Priority date | — |
| Expiry date | Oct 10, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/18
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
A method and system for etching a substrate is described and, in particular, a method for etching large, high aspect ratio features, such as those in micro-electromechanical devices (MEMs), is also described. The method comprises disposing a substrate in a processing system, forming plasma having a substantial population of negatively-charged ions, and etching one or more features in the substrate using the negative ion population.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.