Method and system for post-etch treatment of patterned substrate features
US8460569B2 · kind B2 · utility
11Cited by
0References
7Claims
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Key dates
| Filing date | Apr 7, 2011 |
| Grant date | Jun 11, 2013 |
| Priority date | — |
| Expiry date | Apr 27, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/3213
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of patterning a substrate, comprises providing a set of patterned features on the substrate, exposing the set of patterned features to a dose of ions incident on the substrate over multiple angles, and selectively etching exposed portions of the patterned features.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.