Semiconductor devices with different dielectric thicknesses

US8460996B2 · kind B2 · utility

Assignee

• Freeescale Semiconductor, Inc. · US

Inventors

• Gauri Karve · Cohoes, US
• Mark D. Hall · Austin, US
• Srikanth B. Samavedam · Austin, US

Key dates

• Filing date: Oct 31, 2007
• Grant date: Jun 11, 2013
• Expiry date: Mar 17, 2031

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D84/038

Abstract

An integrated circuit with devices having dielectric layers with different thicknesses. The dielectric layers include a high-k dielectric and some of the dielectric layers include an oxide layer that is formed from an oxidation process. Each device includes a layer including germanium or carbon located underneath the electrode stack of the device. A silicon cap layers is located over the layer including germanium or carbon.