Methods of forming bonded semiconductor structures using a temporary carrier having a weakened ion implant region for subsequent separation along the weakened region
US8461017B2 · kind B2 · utility
19Cited by
10References
21Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 19, 2010 |
| Grant date | Jun 11, 2013 |
| Priority date | — |
| Expiry date | May 1, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/3512
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods of fabricating semiconductor structures include implanting atom species into a carrier die or wafer to form a weakened region within the carrier die or wafer, and bonding the carrier die or wafer to a semiconductor structure. The semiconductor structure may be processed while using the carrier die or wafer to handle the semiconductor structure. The semiconductor structure may be bonded to another semiconductor structure, and the carrier die or wafer may be divided along the weakened region therein. Bonded semiconductor structures are fabricated using such methods.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.