Patent · US Active

Treatment for bonding interface stabilization

US8461018B2 · kind B2 · utility

0Cited by

18References

21Claims

0Family size

Assignee

S.O.I. TEC SILICON ON INSULATOR TECHNOLOGIES · FR

Inventors

Eric Neyret · Saint-Égrève, FR
Sebastien Kerdiles · Meylan, FR

Key dates

Filing date	Jun 6, 2011
Grant date	Jun 11, 2013
Priority date	—
Expiry date	Jun 6, 2031

Classification

Technology area (CPC H)Electricity
CPC primaryH01L21/76254
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A method and/or system are provided for producing a structure comprising a thin layer of semiconductor material on a substrate. The method includes creating an area of embrittlement in the thickness of a donor substrate, bonding the donor substrate with a support substrate and detaching the donor substrate at the level of the area of embrittlement to transfer a thin layer of the donor substrate onto the support substrate. The method also includes thermal treatment of this resulting structure to stabilize the bonding interface between the thin layer and the substrate support. The invention also relates to the structures obtained by such a process.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.