Use of dopants with different diffusivities for solar cell manufacture
US8461032B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 4, 2009 |
| Grant date | Jun 11, 2013 |
| Priority date | — |
| Expiry date | May 10, 2030 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of tailoring the dopant profile of a substrate by utilizing two different dopants, each having a different diffusivity is disclosed. The substrate may be, for example, a solar cell. By introducing two different dopants, such as by ion implantation, furnace diffusion, or paste, it is possible to create the desired dopant profile. In addition, the dopants may be introduced simultaneously, partially simultaneously, or sequentially. Dopant pairs preferably consist of one lighter species and one heavier species, where the lighter species has a greater diffusivity. For example, dopant pairs such as boron and gallium, boron and indium, phosphorus and arsenic, and phosphorus and antimony, can be utilized.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.