Cluster jet processing method, semiconductor element, microelectromechanical element, and optical component
US8461051B2 · kind B2 · utility
0Cited by
9References
15Claims
0Family size
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Key dates
| Filing date | Aug 10, 2009 |
| Grant date | Jun 11, 2013 |
| Priority date | — |
| Expiry date | May 19, 2030 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB81C2201/0132
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for processing a sample using an electrically neutral reactive cluster is provided. The surface of a sample is processed by jetting out a mixed gas that is composed of a reactive gas and a gas with a boiling point lower than that of the reactive gas from a gas jetting part of a vacuum process room in which the sample is placed by a pressure in a range in which the mixed gas is not liquefied, in a predetermined direction, while adiabatically-expanding the mixed gas, thereby generating a reactive cluster and jetting the reactive cluster against the sample in the vacuum process room.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.