Radiation patternable CVD film

US8465903B2 · kind B2 · utility

Assignee

• Applied Materials, Inc. · US

Inventors

• Timothy Weidman · Sunnyvale, US
• Timothy Michaelson · Austin, US
• Paul Deaton · San Jose, US
• Nitin K. Ingle · San Jose, US
• Abhijit Basu Mallick · Palo Alto, US
• Amit Chatterjee · Redmond, US

Key dates

• Filing date: Oct 6, 2011
• Grant date: Jun 18, 2013
• Expiry date: Dec 19, 2031

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/31144
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

Methods for forming photoresists sensitive to radiation on a substrate are provided. Described are chemical vapor deposition methods of forming films (e.g., silicon-containing films) as photoresists using a plasma which may be exposed to radiation to form a pattern. The deposition methods utilize precursors with cross-linkable moieties that will cross-link upon exposure to radiation. Radiation may be carried out in the with or without the presence of oxygen. Exposed or unexposed areas may then be developed in an aqueous base developer.