Method for forming metal oxides and silicides in a memory device

US8466005B2 · kind B2 · utility

Assignee

• INTERMOLECULAR, INC. · US

Inventors

• Dipankar Pramanik · Saratoga, US
• Tony P. Chiang · Campbell, US
• Tim Minvielle · San Jose, US
• Takeshi Yamaguchi · Sakai, JP

Key dates

• Filing date: Jul 22, 2011
• Grant date: Jun 18, 2013
• Expiry date: Sep 19, 2031

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10B63/80

Abstract

Embodiments of the invention generally relate to memory devices and methods for fabricating such memory devices. In one embodiment, a method for fabricating a resistive switching memory device includes depositing a metallic layer on a lower electrode disposed on a substrate and exposing the metallic layer to an activated oxygen source while heating the substrate to an oxidizing temperature within a range from about 300° C. to about 600° C. and forming a metal oxide layer from an upper portion of the metallic layer during an oxidation process. The lower electrode contains a silicon material and the metallic layer contains hafnium or zirconium. Subsequent to the oxidation process, the method further includes heating the substrate to an annealing temperature within a range from greater than 600° C. to about 850° C. while forming a metal silicide layer from a lower portion of the metallic layer during a silicidation process.