Semiconductor device structures and related processes
US8466025B2 · kind B2 · utility
5Cited by
20References
7Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 1, 2011 |
| Grant date | Jun 18, 2013 |
| Priority date | — |
| Expiry date | Aug 1, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/516
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Improved highly reliable power RFP structures and fabrication and operation processes. The structure includes plurality of localized dopant concentrated zones beneath the trenches of RFPs, either floating or extending and merging with the body layer of the MOSFET or connecting with the source layer through a region of vertical doped region. This local dopant zone decreases the minority carrier injection efficiency of the body diode of the device and alters the electric field distribution during the body diode reverse recovery.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.