Process to remove Ni and Pt residues for NiPtSi applications using chlorine gas
US8466058B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 14, 2011 |
| Grant date | Jun 18, 2013 |
| Priority date | — |
| Expiry date | Nov 14, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/0212
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The invention discloses a method for cleaning residues from a semiconductor substrate during a nickel platinum silicidation process. Post silicidation residues of nickel and platinum may not be removed adequately just by an aqua regia solution (comprising a mixture of nitric acid and hydrochloric acid). Therefore, embodiments of the invention provide a multi-step residue cleaning, comprising exposing the substrate to an aqua regia solution, followed by an exposure to a chlorine gas or a solution comprising dissolved chlorine gas, which may further react with remaining platinum residues, rendering it more soluble in aqueous solution and thereby dissolving it from the surface of the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.