Method for forming a multilayer structure
US8470689B2 · kind B2 · utility
197Cited by
6References
13Claims
0Family size
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Key dates
| Filing date | Nov 10, 2011 |
| Grant date | Jun 25, 2013 |
| Priority date | — |
| Expiry date | Jan 16, 2032 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB81C2201/0115
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
The method for forming a multilayer structure on a substrate comprises providing a stack successively comprising an electron hole blocking layer, a first layer made from N-doped semiconductor material having a dopant concentration greater than or equal to 1018 atoms/cm3 or P-doped semiconductor material, and a second layer made from semiconductor material of different nature. A lateral electric contact pad is made between the first layer and the substrate, and the material of the first layer is subjected to anodic treatment in an electrolyte.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.